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The MAPC-A3008-AB000 is a GaN-on-SiC packaged transistor designed for high-power RF applications. It operates from DC to 6 GHz with a supply voltage of 28 V. The device delivers 45 W of saturated power and provides 14.5 dB of gain. Key electrical parameters include an 84 V drain-source breakdown voltage, 6 A continuous drain current, and a gate-source voltage range of -10 V to +2 V. It supports N-channel configuration and functions within a temperature range of -40 °C to +85 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and pinout compatibility. Confirm that the procurement channel sources genuine MACOM Technology Solutions components to avoid counterfeit parts. Check RoHS compliance status if required by project specifications. Ensure storage conditions align with the specified operating temperature range to maintain device integrity prior to assembly.
Select this component when designing amplifiers requiring 45 W output power at frequencies up to 6 GHz. Consider the 28 V supply requirement and thermal management needs for high-power dissipation. Evaluate the 14.5 dB gain against system noise figure requirements. Compare the physical dimensions of the 440166 package against available PCB real estate constraints.
This part belongs to the MAPC-A3008 family of GaN-on-SiC transistors manufactured by MACOM Technology Solutions. These devices are engineered for demanding RF environments where high linearity and power density are critical. The family utilizes advanced semiconductor processes to achieve superior performance metrics compared to traditional silicon-based alternatives.
Consult the official MACOM datasheet for direct substitute part numbers or recommended upgrades. Verify pin compatibility and thermal characteristics before substituting with other manufacturers' devices.