SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MAPC-A3010-AB000 is a packaged GaN on SiC transistor designed for high-power RF applications. It operates from DC to 4 GHz with a rated voltage of 28 V and delivers an output power of 120 W. The device features a gain of 20.3 dB and utilizes a 440223 chassis mount package. This component supports unmatched configurations and is built using a 0.15 µm production process for reliable performance in demanding environments.
Verify the specific suffix AB000 against the manufacturer's current datasheet to confirm pinout and mechanical dimensions. Ensure the 440223 package compatibility with your chassis design. Confirm thermal requirements align with the 120 W output capability. Cross-reference the 0.15 µm process node details if reliability data is critical for your application environment.
Select this component when high output power at microwave frequencies is required. The GaN on SiC technology offers superior power density compared to traditional silicon devices. Consider the 28 V supply requirement and the need for chassis mounting for heat dissipation. Verify that the DC to 4 GHz bandwidth meets your system's spectral needs without additional filtering constraints.
This part belongs to MACOM's portfolio of GaN on SiC transistors, which are engineered for high-efficiency and high-reliability RF solutions. The MAPC series focuses on delivering robust power performance in compact packages suitable for harsh environments. These components support both matched and unmatched designs to provide flexibility for various amplifier topologies.
Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternatives or cross-reference options based on specific electrical and mechanical parameters.