MAPG-002729-350L00

Overview

The MAPG-002729-350L00 is a common-source, Class AB S-band GaN pallet power amplifier operating from 2700 to 2900 MHz. It utilizes dual GaN on SiC high-power transistors combined to deliver a guaranteed 350 W peak pulsed power and 35 W average power. The device operates at +50 V with input and output matched to 50 Ω. Key electrical specifications include 11.5 dB gain, 50% drain efficiency, and enhanced harmonic rejection (second harmonic >50 dBc, third harmonic >30 dBc). Constructed on an RO4003C substrate with a nickel-plated aluminum carrier, it supports true standard SMT assembly.

Feature Summary

• Dual GaN on SiC high-power transistors combined for high peak pulsed power output
• Enhanced harmonic rejection ensuring clean signal transmission
• Nickel plated aluminum carrier with RO4003C substrate for thermal management
• True standard SMT assembly compatible design

Applications

• Pulsed radar systems
• Medical applications requiring high power performance
• Electronic warfare systems

Procurement Notes

Verify the specific revision level of the datasheet prior to ordering, as MACOM reserves the right to make changes without notice. Confirm that the application environment strictly adheres to pulsed operation limits, as continuous wave operation is not recommended. Ensure proper electrostatic discharge handling procedures are followed during installation due to the sensitivity of Gallium Nitride devices.

Selection Notes

Select this component when small size, light weight, and high power performance are critical requirements. It is suitable for applications demanding robust operation under wide environmental conditions. Verify that the system can support the required bias sequencing and thermal dissipation capabilities, specifically maintaining junction temperatures below specified limits to ensure long-term reliability.

Part Context

This part belongs to MACOM's portfolio of S-band GaN pallet power amplifiers designed for high-efficiency RF applications. It represents a solution for integrating high power density into compact form factors using advanced semiconductor materials. The product line focuses on providing reliable performance for defense and medical sectors where SWaP constraints are significant.

Replacement Considerations

No public confirmed substitute part numbers are documented in the official datasheet.

FAQ

Is continuous wave operation supported?

No, continuous wave operation is not recommended for this device.

What is the recommended bias sequencing for turning the device on?

Set VG to pinch-off value, turn on VD to nominal voltage, increase VG to desired quiescent current, then apply RF power.

How is the exposed pad handled?

The exposed pad centered on the package bottom must be connected to RF and DC ground.