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The MAPR-000912-500S00 is an NPN silicon microwave power transistor designed for avionics pulsed power applications. It operates in the 960 to 1215 MHz frequency range with a 10 µs pulse width and 10% duty cycle. The device delivers a minimum output power of 500 W at VCC = 50 V and PIN = 63 W, achieving a typical gain of 9 dB and collector efficiency of 45%. Key electrical specifications include a collector-emitter breakdown voltage (BVCES) of 80 V, thermal resistance (RTH(JC)) of 0.08 °C/W, and input return loss of -9 dB. The component utilizes a hermetic metal/ceramic package and features internal impedance matching.
Verify the specific datasheet revision (e.g., Rev. V1) against current MACOM documentation before procurement. Confirm that the RoHS compliance status aligns with European Union Directive 2011/65/EU requirements for your project. Ensure the ordering suffix matches the exact package and testing conditions specified in the official product data sheet.
Select this component for applications requiring 500 W output power within the L-band spectrum under pulsed conditions. Verify that the system can support the absolute maximum ratings, including a peak collector current of 52.5 A and junction temperature up to +200°C. Ensure the load mismatch tolerance (VSWR-S 1.5:1) and stability limits (VSWR-T 3:1) are compatible with the antenna or transmission line interface.
This part belongs to the M/A-COM Technology Solutions lineup of RF bipolar transistors. It is specifically engineered for high-power avionics use cases where broadband performance and reliability are critical. The device represents a specialized solution for pulsed power amplification rather than continuous wave operations.
No public confirmed substitute part numbers are available in the provided documentation. Consult MACOM directly for potential cross-reference options or updated revisions.