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The MAPR-002729-170M00 is an NPN silicon microwave power transistor designed for radar pulsed power applications. Operating in the S-band from 2.7 to 2.9 GHz, it delivers a rated output power of 170W with a pulse width of 100µs and a 10% duty cycle. The device features a common base configuration and broadband Class C operation. Key electrical specifications include a collector-emitter breakdown voltage of 65V, a maximum peak collector current of 27A, and a thermal resistance of 0.35°C/W. It incorporates internal input and output impedance matching within a hermetic metal/ceramic package.
Verify component authenticity through authorized MACOM distributors or direct channels. Confirm RoHS compliance status and packaging details against the latest datasheet revision V1. Ensure storage conditions remain within the specified -65 to +200°C range to maintain hermetic seal integrity. Request batch-specific test reports if required for critical radar deployment validation.
Select this component for high-power S-band radar applications requiring robust pulsed performance. Evaluate thermal management requirements based on the 0.35°C/W junction-to-case resistance. Verify that the load mismatch tolerance supports the intended antenna environment, as the device is stable up to a 1.5:1 VSWR at the source and 2:1 at the load.
This part belongs to MACOM's portfolio of NPN silicon microwave power transistors optimized for radar systems. It shares architectural similarities with other models in the series, such as the PH2729-110M, but offers higher power density and specific impedance matching tailored for 2.7-2.9 GHz operations.
Direct substitutes are not explicitly listed in the public documentation. Consider evaluating the PH2729-130M for lower power requirements or consulting MACOM engineering for custom alternatives if pinout compatibility is critical.