MAPR-002731-115M00

MAPR-002731-115M00

$278.37
  • Description:RF TRANS NPN 65V
  • Series:-

SKU:cc98949701d0 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 65V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:8.06dB ~ 8.45dB
  • Power - Max:115W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MAPR-002731-115M00

Overview

The MAPR-002731-115M00 is a radar pulsed power transistor manufactured by M/A-COM Technology Solutions. It operates in the 2.7 to 2.9 GHz frequency range with an output power of 115W, utilizing a 200µs pulse width and 10% duty cycle. The device features an NPN silicon microwave structure with common base configuration and broadband Class C operation. Key electrical specifications include a collector-emitter breakdown voltage of 65V, a minimum power gain of 7.6dB, and a collector efficiency of at least 38%. It incorporates internal input and output impedance matching within a hermetic metal/ceramic package.

Feature Summary

  • High efficiency inter-digitized geometry with diffused emitter ballasting resistors
  • Internal input and output impedance matching for simplified integration
  • Gold metallization system ensuring robust performance
  • Hermetic metal/ceramic package construction

Applications

  • Pulsed radar systems requiring high peak power output
  • Microwave communication transmitters
  • Electronic warfare applications

Procurement Notes

Verify component authenticity through authorized M/A-COM distributors or direct manufacturer channels. Confirm that the received unit matches the marking PR2731-115M. Ensure storage conditions remain within the specified -65°C to +200°C range to maintain junction integrity. Request current engineering samples or test data as volume production commitment may not be guaranteed for this preliminary specification.

Selection Notes

Select this component when designing circuits requiring 115W pulsed output at 2.7-2.9 GHz. Ensure the thermal management solution can handle the specific dissipation requirements under 200µs pulse conditions. Verify that the load mismatch tolerance of 2:1 and stability VSWR of 1.5:1 align with the system's antenna characteristics. Consider the fixed mechanical outline for PCB footprint compatibility.

Part Context

This part belongs to the M/A-COM radar pulsed power transistor family, designed specifically for high-power microwave applications. It shares architectural similarities with other devices in the series, such as the PH2729 models, but offers distinct power and frequency optimizations. The product represents M/A-COM's capability in silicon microwave power technology for defense and aerospace sectors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative M/A-COM radar transistors based on similar frequency ranges and power levels only after verifying pinout and thermal compatibility.

MAPR-002731-115M00MAPR-002731-115M00
$278.37
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