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Product Detailed Parameters
- Description：RF TRANS NPN 65V
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：65V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：10.16dB ~ 10.25dB
- Power - Max：50W
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：5.3A
- Operating Temperature：200°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MAPRST0912-50 is an NPN silicon microwave power transistor designed for avionics pulsed applications. It operates in a common base configuration with broadband Class C performance across the 960 MHz to 1215 MHz frequency range. The device delivers 50 W of output power at 10 µs pulse width and 10% duty cycle, achieving up to 49.6% collector efficiency. Key electrical parameters include a collector-emitter breakdown voltage (BVCES) of 65 V, a maximum junction temperature of 200°C, and a thermal resistance (RTH(JC)) of 0.80 °C/W.
Feature Summary
- High-efficiency inter-digitized geometry with diffused emitter ballasting resistors
- Internal input and output impedance matching for simplified integration
- Hermetic metal/ceramic package construction with gold metallization system
Applications
- Avionics pulsed power systems
- Communications radar transmitters
- Industrial, scientific, and medical (ISM) equipment
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official MACOM documentation. Ensure compliance with RoHS standards as specified in the datasheet. Confirm that the procurement channel provides valid traceability records for hermetic ceramic packages. Validate that storage conditions remain within the -65°C to +200°C range to prevent damage to the internal gold metallization system.
Selection Notes
Select this component when designing high-power RF stages requiring robust load mismatch tolerance. The device supports a VSWR-T of 1.5:1 and VSWR-S of 10:1, providing stability in demanding environments. Designers must account for the 6.2 W input power requirement and ensure adequate heat sinking to manage the 220 W power dissipation rating at +25°C ambient temperature.
Part Context
This model belongs to the MAPR series of NPN silicon microwave power transistors manufactured by M/A-COM Technology Solutions. The series utilizes a hermetic metal/ceramic package suitable for harsh operational environments. The specific designation indicates its classification as a high-power device optimized for pulsed operation in the L-band frequency spectrum.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the maximum collector-emitter breakdown voltage?
The Collector-Emitter Breakdown Voltage (BVCES) is rated at a minimum of 65 V.
How does the device handle load mismatches?
The transistor exhibits high load mismatch stability, tolerating a VSWR-S of up to 10:1 and a VSWR-T of 1.5:1.
What is the recommended operating pulse width and duty cycle?
The device is specified for a 10 µs pulse width with a 10% duty cycle.
