MAVR-000120-12030P

Overview

The MAVR-000120-12030P is a gallium arsenide flip-chip hyperabrupt varactor diode from the MA46H120 series. It features constant gamma for linear tuning and low parasitic capacitance. The device operates within an ambient temperature range of -40°C to +125°C and has a maximum power dissipation of 100 mW. Electrical specifications include a minimum breakdown voltage of 20 V at 10 µA reverse current and a maximum reverse leakage current of 100 nA at 14 V reverse bias. The component utilizes silicon nitride passivation and polyimide scratch protection.

Feature Summary

• Constant gamma characteristic ensures linear tuning performance across the operating voltage range.
• Flip-chip configuration designed for pick-and-place insertion with extremely low parasitics.
• Junction fully passivated with silicon nitride and protected by an additional polyimide layer.

Applications

• RF circuit tuning applications requiring linear capacitance variation
• VCO (Voltage Controlled Oscillator) designs utilizing hyperabrupt junctions
• Automated surface mount assembly processes

Procurement Notes

Verify the specific ordering suffix against official documentation, as it determines the physical packaging format such as waffle pack or gel pack. Confirm that the required environmental screening levels match the standard manufacturing process. Ensure that the handling procedures account for the flip-chip nature of the component to prevent mechanical damage during placement.

Selection Notes

Select this component when a constant gamma value near 1.0 is required for linear frequency tuning. Evaluate the thermal management requirements to ensure power dissipation remains within the 100 mW limit. Consider the operating temperature range of -40°C to +125°C for suitability in harsh environments. Verify that the package type aligns with the automated assembly equipment available.

Part Context

This part belongs to the MA46H120 series of GaAs constant gamma flip-chip varactor diodes. The series is fabricated on OMCVD epitaxial wafers to ensure high device uniformity. Other variants in the series include different packaging options like whole wafer or gel pack configurations, sharing identical electrical characteristics.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Components from other manufacturers offering similar GaAs hyperabrupt varactors with constant gamma characteristics may be considered if pin compatibility and electrical parameters are verified.