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The MAVR-000340-11410T is a single silicon hyperabrupt junction varactor diode manufactured by MACOM Technology Solutions. It utilizes an ion-implanted process to ensure superior capacitance-voltage repeatability. The device is housed in a surface-mount SOD-323 package, designed for low voltage operation with high Q factors. Key electrical parameters include a reverse voltage rating of 12 V and a total capacitance of approximately 18.6 pF. It exhibits a minimum quality factor of 350 at 50 MHz and maintains a capacitance ratio exceeding 3:1 between 0.5 V and 3.0 V.
Verify the specific suffix '11410T' against official MACOM documentation to confirm tape and reel packaging specifications. Ensure the procurement channel provides traceability to authorized distribution networks. Cross-reference the datasheet revision date to confirm compliance with current RoHS standards and material declarations prior to finalizing purchase orders.
Select this component when high capacitance ratios are required at low bias voltages. The SOD-323 form factor suits space-constrained designs. Evaluate the 12 V reverse voltage limit against circuit peak reverse conditions. Consider the 350 minimum Q at 50 MHz for noise performance requirements in RF signal paths.
This part belongs to the MA4ST300 series of low-voltage wide-band silicon hyperabrupt varactors. The series includes variants in SOT-23, SOT-323, and SOD-323 packages. These devices are engineered for commercial wireless applications requiring stable tuning characteristics and high Q performance under low power constraints.
Direct substitutes within the same family include other MA4ST300 series variants such as MA4ST330-1141T. Verify pin compatibility and package dimensions before substitution. Confirm that alternative parts meet the same 12 V reverse voltage and Q factor specifications.