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The MAVR-011020-14110G is a single-polarity gallium arsenide (GaAs) hyperabrupt varactor diode designed for flip-chip surface-mount applications. It features a constant gamma characteristic to support linear tuning requirements in RF circuits. The device operates within a junction temperature range of -40°C to +125°C and is rated for a maximum peak reverse voltage of 22 V. Key electrical parameters include a capacitance of 0.05 pF at 15 V and 1 MHz, and a quality factor of 3000 at 4 V and 50 MHz. It is housed in a compact 2-XFDFN or FCDFN package.
Verify the specific suffix 'G' against the manufacturer datasheet to confirm packaging or material compliance differences compared to the 'P' variant. Ensure ESD handling protocols are followed during assembly due to the flip-chip configuration. Cross-reference the PCN documents for any recent changes in tape and reel specifications or marking updates before finalizing procurement orders.
Select this component when a low capacitance value and high Q-factor are required for high-frequency linear tuning applications. The 22 V reverse voltage rating suits moderate voltage swing environments. Compare the 0.05 pF minimum capacitance against circuit requirements to ensure adequate tuning range. Verify that the flip-chip footprint matches the PCB land pattern design guidelines provided in the official datasheet.
This part belongs to MACOM's MAVR-011020 series of GaAs hyperabrupt varactor diodes. These devices are fabricated using OM-CVD epitaxial materials to achieve high performance. The series is engineered for applications demanding stable tuning characteristics and high reliability in microwave and RF systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative MACOM varactors with similar capacitance-voltage curves and package dimensions if substitution is necessary.