MAVR-011020-14110P

Overview

The MAVR-011020-14110P is a gallium arsenide flip-chip hyperabrupt varactor diode fabricated on OMCVD epitaxial wafers. It features constant gamma for linear tuning and low parasitic capacitance. Electrical specifications at +25°C include a minimum breakdown voltage of 22 V at 10 µA reverse current, maximum reverse leakage current of 100 nA at 18 V, and forward voltage between 1.15 V and 1.25 V at 1 mA. Total capacitance ranges from 0.19 pF to 0.275 pF at 0 V, 0.065 pF to 0.097 pF at 4 V, and 0.025 pF to 0.048 pF at 15 V, all measured at 1 MHz. The Q factor is 3000 at 50 MHz with 4 V bias, and the gamma value is between 0.9 and 1.1 across 2 V to 12 V.

Feature Summary

• Constant gamma characteristic enables linear tuning performance
• Flip-chip configuration suitable for automated pick-and-place insertion
• Fully passivated with silicon nitride and polyimide scratch protection

Applications

• High-frequency RF circuits requiring linear tuning
• Automated surface mount assembly processes
• Low parasitic capacitance applications in microwave designs

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The '0P' suffix indicates availability in pocket tape and reel packaging, while other suffixes may denote different packaging formats such as gel packs. Confirm that the component meets RoHS compliance requirements and matches the exact part number designation to ensure compatibility with intended manufacturing processes.

Selection Notes

Select this component when a gallium arsenide hyperabrupt varactor diode with constant gamma is required for linear tuning applications. Consider the device's low parasitic capacitance and high Q factor for high-frequency operations. Ensure the design accommodates the specified operating temperature range and mounting techniques, including solder or conductive epoxy attachment methods.

Part Context

This part belongs to MACOM's series of GaAs flip-chip varactor diodes designed for high cutoff frequencies. These devices utilize OMCVD epitaxial material to achieve high uniformity and extremely low parasitics. The product line includes various configurations optimized for surface mount technology and robust handling during automated assembly.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.