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MBR120100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOT 100V 120A 2TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC MBR120100CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 100 V and an average forward current of 120 A per package. It features a Twin Tower package with electrically isolated base plates. The device supports a junction temperature range from -55 °C to +150 °C, with a thermal resistance (junction-case) of 0.80 °C/W per leg. Maximum forward voltage is 0.84 V at Tj = 150 °C, and it withstands a non-repetitive peak forward surge current of 800 A.
Verify the specific part number suffix against official documentation to confirm terminal configuration details. Confirm RoHS compliance status through manufacturer datasheets or certified component databases prior to procurement. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation.
Select this component for applications requiring high average current handling and low forward voltage drop. Evaluate the 100 V reverse voltage rating against circuit peak inverse voltages. Consider the Twin Tower package dimensions for mechanical integration and verify that the operating temperature range meets environmental requirements.
This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings ranging from 45 V to 100 V, all sharing the same 120 A current rating and Twin Tower packaging format.
Compatible substitutes within the same series include MBR12045CT, MBR12060CT, and MBR12080CT. Verify that the replacement part's reverse voltage rating exceeds the application's maximum circuit voltage.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.