Diode Arrays MBR2X160A080 product image

MBR2X160A080

$42.30
  • Description:DIODE MOD SCHOTT 80V 160A SOT227
  • Series:-

SKU:0f1a3172f2a0 Category: Brand:

  
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MBR2X160A080 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 80V 160A SOT227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR2X160A080

  • Description:DIODE MOD SCHOTT 80V 160A SOT227
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:2 Independent
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):160A
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 160 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 80 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR2X160A080

MBR2X160A080

Diode Arrays Overview

The GeneSiC Semiconductor MBR2X160A080 is a silicon Schottky rectifier module featuring an electrically isolated SOT-227 package. It provides a maximum repetitive peak reverse voltage of 80 V and supports an average forward current of 320 A per package. The device exhibits a maximum instantaneous forward voltage of 0.84 V at 160 A and 25 °C, with a thermal resistance junction-to-case of 0.30 °C/W per leg. It operates within a temperature range of -40 to 150 °C and includes high surge capability.

Diode Arrays Feature Summary

  • Electrically isolated base plate for enhanced safety
  • High surge current handling capability
  • Low forward voltage drop characteristics

Diode Arrays Applications

  • DC/DC converters
  • Free-wheeling rectification in power supplies
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific datasheet version and manufacturer documentation before integration. Confirm that the SOT-227 package dimensions and terminal configurations match the mechanical design requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under actual operating conditions.

Diode Arrays Selection Notes

Select this component when applications require high current capacity with low forward voltage loss in compact isolated packages. The 80 V rating suits low-voltage DC bus applications. Evaluate thermal performance against the 0.30 °C/W junction-to-case resistance to ensure reliable operation within the specified temperature limits.

Diode Arrays Part Context

This module belongs to the GeneSiC Semiconductor MBR2X series of Schottky rectifiers. These devices are designed for high-efficiency power conversion applications requiring robust isolation and high current handling. The SOT-227 package provides a standardized mounting interface for industrial power electronics.

Diode Arrays Replacement Considerations

Consult official cross-reference lists from Navitas Semiconductor or GeneSiC Semiconductor for verified substitutes. Verify electrical parameters, package compatibility, and thermal characteristics before substitution.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 80 V.

Is the module sensitive to electrostatic discharge?

No, the module is not ESD sensitive.

What is the isolation voltage between terminals?

The isolation voltage (ViSO) is 2500 V AC for one minute.

MBR2X160A080MBR2X160A080
$42.30
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