Diode Arrays MBR60030CT product image

MBR60030CT

$91.69
  • Description:DIODE MOD SCHOTT 30V 300A 2TOWER
  • Series:-

SKU:1d92829fd1a1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBR60030CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 300A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR60030CT

  • Description:DIODE MOD SCHOTT 30V 300A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):300A
  • Voltage - Forward (Vf) (Max) @ If:750 mV @ 300 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR60030CT

MBR60030CT

Diode Arrays Overview

The MBR60030CT is a silicon power Schottky diode module manufactured by GeneSiC Semiconductor. It features a twin tower package configuration with two elements in a common anode arrangement. The device supports a repetitive peak reverse voltage of 30 V and an average forward current of 600 A per leg. Key electrical parameters include a maximum forward voltage of 0.75 V at 300 A and a thermal resistance of 0.28 °C/W per leg. The component operates within a junction temperature range of -55 °C to 150 °C.

Diode Arrays Feature Summary

  • High surge capability designed for robust power applications
  • Twin tower package structure for efficient mounting
  • Low forward voltage drop characteristics
  • Not sensitive to electrostatic discharge

Diode Arrays Applications

  • Power supply rectification
  • Free-wheeling diodes in DC-DC converters
  • Inverter circuits

Diode Arrays Procurement Notes

Verify the specific suffix designation against official documentation, as variants such as 'CTR' may indicate reversed leads compared to the standard 'CT' configuration. Confirm RoHS compliance status and ensure the sourcing channel provides valid manufacturer traceability for this discrete semiconductor component.

Diode Arrays Selection Notes

Select this component based on its 30 V blocking voltage rating and 600 A continuous current capacity. Evaluate the 0.28 °C/W thermal resistance for heat sink requirements. Ensure the twin tower package fits the mechanical constraints of the target assembly and that the operating temperature range meets system environmental specifications.

Diode Arrays Part Context

This part belongs to the MBR600 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series includes variants ranging from 20 V to 40 V reverse voltage ratings. These modules are engineered for high-current applications requiring low conduction losses and high reliability in power electronics systems.

Diode Arrays Replacement Considerations

Compatible substitutes within the same family include the MBR60020CT and MBR60040CT. Verify that alternative part numbers match the required voltage rating and physical terminal configuration before implementation.

MBR60030CTMBR60030CT
$91.69
Buy Now