MBRB10100CT-M3/4W

Diode Arrays Overview

The MBRB10100CT-M3/4W is a high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a single circuit configuration in a D2PAK (TO-263AB) package. Key electrical parameters include a maximum repetitive peak reverse voltage of 100 V and a maximum average forward rectified current of 10 A at a case temperature of 133 °C. The device exhibits a low forward voltage drop, specified as a maximum of 0.80 V at 10 A with a case temperature of 25 °C. It supports a peak forward surge current of 150 A and operates within a junction and storage temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for lower power losses and high efficiency.
• Features a low forward voltage drop suitable for high-frequency operation.
• Provides high forward surge capability and meets MSL level 1 per J-ST D-020.
• Base part number is halogen-free, RoHS-compliant, and commercial grade.

Diode Arrays Applications

• High frequency rectifier of switching mode power supplies
• Freewheeling diodes
• DC/DC converters
• Polarity protection applications

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube packaging format containing 50 units per tube, distinct from the tape and reel options. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen-free status, as defined by the base M3 designation. Ensure the application design accounts for the thermal resistance characteristics provided in the datasheet to maintain safe operating temperatures.

Diode Arrays Selection Notes

Select this component when a single Schottky rectifier with a 100 V rating and 10 A continuous current capacity is required in a surface-mount D2PAK package. Consider the TMBS technology benefits for applications demanding reduced power loss and improved efficiency compared to standard barrier technologies. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance and derating curves for the intended operating environment.

Diode Arrays Part Context

This device belongs to the MBRB1090-M3 and MBRB10100-M3 series of high-voltage TMBS rectifiers. The family shares identical mechanical dimensions and general performance characteristics, differentiated primarily by their voltage ratings of 90 V and 100 V respectively. The MBRB10100 variant provides the higher voltage blocking capability while maintaining the same current handling and thermal properties as its lower voltage counterpart.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include the MBRB1090-M3/4W, which offers a 90 V rating instead of 100 V. Other variants such as MBRB10100-M3/8W share the same electrical specifications but differ in packaging format, utilizing tape and reel instead of tubes.