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MBRD660CTTRL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY SCHOTTKY 60V 3A DPAK. Review the specifications below when checking this part for your BOM.
The MBRD660CTTRL is a surface mount Schottky rectifier featuring a center tap configuration with two silicon elements in a D-PAK (TO-252AA) package. It provides a maximum average forward current of 6 A per device and supports a repetitive peak reverse voltage of 60 V. The component exhibits a low forward voltage drop, rated at 0.85 V at 6 A and 0.65 V at 3 A when the junction temperature is 125 °C. It withstands a non-repetitive surge current of 490 A under a 5 μs sine pulse condition. The junction temperature range spans from -40 °C to 150 °C.
Verify that the ordering suffix TRR corresponds to the specific right-oriented tape and reel packaging required for automated assembly processes. Confirm compliance with lead-free manufacturing standards by checking for the PbF designation if applicable to your project specifications. Ensure the selected variant matches the exact voltage rating and current requirements defined in the system design parameters.
Select this component for applications requiring high-frequency operation and minimal forward voltage drop within a compact surface mount form factor. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance values to ensure reliable performance under continuous load conditions. Consider the center tap topology suitability for specific converter topologies compared to standard single-diode alternatives.
This device belongs to the MBRD650CT and MBRD660CT series of Schottky rectifiers manufactured by Vishay General Semiconductor - Diodes Division. These components utilize the SWITCHMODE Power Rectifier technology derived from International Rectifier's acquisition. The series is engineered specifically for general-purpose rectification tasks where space constraints and switching efficiency are critical design factors.
MBRD660CTTRR
The maximum non-repetitive surge current is 490 A for a 5 μs sine pulse or 75 A for a 10 ms sine pulse.
The device features a center tap configuration where the base serves as the common cathode connection point.
The typical junction capacitance is 145 pF per leg, measured at 5 VDC with a test signal frequency ranging from 100 kHz to 1 MHz.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.