Diode Arrays MBRF1035CTH product image

MBRF1035CTH

$0.34
  • Description:DIODE ARR SCHOT 35V 10A ITO220AB
  • Series:-

SKU:191da7578c1b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MBRF1035CTH is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 35V 10A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBRF1035CTH

  • Description:DIODE ARR SCHOT 35V 10A ITO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):35 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:800 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:100 µA @ 35 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MBRF1035CTH

MBRF1035CTH

Diode Arrays Overview

The MBRF1035CTH is a dual Schottky barrier rectifier from Taiwan Semiconductor, rated for 10 A average forward current and 35 V repetitive peak reverse voltage. It utilizes an ITO-220AB package with isolated case construction. The device features low forward voltage drop and high surge current capability (120 A). It is AEC-Q101 qualified, ensuring automotive-grade reliability. Key electrical parameters include a maximum junction temperature of 150 °C and a typical junction-to-case thermal resistance of 3.5 °C/W.

Diode Arrays Feature Summary

  • AEC-Q101 qualified for automotive applications
  • Guard ring structure provides overvoltage protection
  • Low power loss and high efficiency design
  • High surge current capability

Diode Arrays Applications

  • Switching mode power supplies (SMPS)
  • Adapters
  • DC to DC converters

Diode Arrays Procurement Notes

Verify the specific ordering code suffix 'H' confirms AEC-Q101 qualification status as defined in the datasheet. Confirm the package type is ITO-220AB and check packing quantity details against supplier listings. Ensure compliance with RoHS and halogen-free requirements per IEC 61249-2-21 standards before procurement.

Diode Arrays Selection Notes

Select this component for circuits requiring dual Schottky rectification with automotive reliability standards. The 35 V rating suits low-voltage applications. Consider the 10 A current capacity and thermal resistance for heat dissipation needs. Verify that the ITO-220AB package fits the PCB layout constraints.

Diode Arrays Part Context

This part belongs to the MBRF10xCT series by Taiwan Semiconductor, covering voltage ratings from 35 V to 200 V. The 'H' suffix denotes AEC-Q101 qualification. It shares the same physical package and general features as other variants in the series, differing primarily in reverse voltage specifications.

Diode Arrays Replacement Considerations

Other parts in the MBRF10xCT series offer different voltage ratings but share identical current and package specifications. Cross-referencing requires matching the 10 A current and 35 V reverse voltage limits.

Diode Arrays FAQ

What does the 'H' suffix indicate in the MBRF1035CTH part number?

The 'H' suffix indicates that the device is AEC-Q101 qualified.

Is the case connection isolated or connected to the cathode?

The datasheet specifies an isolated case construction.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 120 A for an 8.3 ms single half-sine wave.

MBRF1035CTHMBRF1035CTH
$0.34
Buy Now