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MBRF20200CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is DIODE ARR SCHOTTKY 200V ITO220AB. Review the specifications below when checking this part for your BOM.
The Littelfuse MBRF20200CTR is a Schottky Barrier Rectifier featuring a common anode configuration within an electrically isolated ITO-220AB package. It provides a peak inverse voltage of 200V and supports an average forward current of 10A per leg (20A total). The device operates with a maximum junction temperature of +175°C and includes guard ring technology for enhanced ruggedness.
Verify the specific ordering suffix 'CTR' against official Littelfuse documentation to confirm the tube packing quantity and configuration details. Ensure that the required electrical isolation characteristics match the application's safety standards before finalizing procurement specifications.
Select this component when a common anode topology is required for dual-leg rectification. The ITO-220AB package facilitates effective thermal management through clip or screw mounting. Verify that the 200V rating aligns with the circuit's peak repetitive reverse voltage requirements.
This part belongs to the Littelfuse MBR series of Schottky Barrier Rectifiers, designed for commercial applications requiring high temperature stability and low leakage. The series utilizes silicon technology to deliver low forward voltage drops suitable for efficient power conversion systems.
Consult official Littelfuse substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values to ensure compatibility with existing heatsink designs.
The maximum thermal resistance from junction to case is 4.5 °C/W under DC operation conditions.
The ITO-220AB package is electrically isolated, allowing for clip mounting where the epoxy body is kept away from the heatsink edge by more than 0.110 inches along the lead direction.
Each leg can withstand a peak one-cycle non-repetitive surge current of 150 A for an 8.3 ms half-sine pulse.
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