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MBRT12030 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 30V 60A 3TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBRT12030 is a silicon power Schottky diode module featuring a three-tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 30 V and supports an average forward current of 120 A per package. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.70 V and a peak forward surge current capability of 800 A for an 8.3 ms half-sine pulse.
Verify the specific part number against official GeneSiC Semiconductor documentation to confirm terminal configuration and exact electrical ratings. Ensure the selected variant matches the required voltage and current specifications for the intended application. Cross-reference datasheet parameters with system requirements before procurement.
Select this component based on its 30 V blocking voltage and 120 A continuous current rating. Consider the thermal resistance of 0.80 °C/W per leg for heat sink design. The three-tower package facilitates screw mounting, which should be accounted for in the mechanical layout. Verify compatibility with operating temperatures up to 150 °C.
This component belongs to the MBRT120 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series includes variants with different voltage ratings ranging from 20 V to 40 V. All models share the same three-tower package and similar current handling capabilities, differing primarily in their reverse voltage specifications.
Direct replacements must match the 30 V rating, 120 A current capacity, and three-tower package dimensions. Verify that alternative components offer comparable thermal resistance and surge current ratings to ensure circuit reliability.
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