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MBRT20040R is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 40V 100A 3TOWER. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor MBRT20040R is a silicon power Schottky diode module featuring a Three Tower package with an electrically isolated base plate. It provides a repetitive peak reverse voltage of 40 V and an average forward current rating of 200 A per package. The device exhibits a maximum instantaneous forward voltage of 0.70 V at Tj = 150 °C and supports a peak forward surge current of 1500 A per leg. Thermal resistance from junction to case is 0.45 °C/W per leg, with an operating temperature range spanning -55 °C to +150 °C.
Verify the specific electrical ratings against the official datasheet before integration. Confirm that the thermal management design accommodates the specified junction-to-case thermal resistance. Ensure the application environment remains within the stated operating temperature limits to maintain reliability and performance specifications.
Select this component when a low forward voltage drop and high surge current capacity are required in a thermally efficient package. The isolated base plate facilitates direct heatsink mounting without additional insulators. Consider the 40 V reverse voltage rating to ensure adequate margin for the specific circuit topology and potential voltage spikes.
This part belongs to the MBRT200 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different reverse voltage ratings, such as 20 V, 30 V, 35 V, and 40 V, all sharing the same 200 A current rating and Three Tower package form factor.
Direct replacements include other MBRT20040R units or equivalent modules from the same manufacturer family with identical pinout and thermal characteristics. Verify that any substitute maintains the 40 V reverse voltage and 200 A current ratings.
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