MBRT60035R

Diode Arrays Overview

The GeneSiC Semiconductor MBRT60035R is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 35 V and an average forward current of 600 A per package. It utilizes a three-tower isolation type package with an electrically isolated base plate. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.75 V per leg at Tj = 25 °C and a maximum thermal resistance from junction to case of 0.28 °C/W per leg. The 'R' designation indicates reversed leads compared to standard configurations.

Diode Arrays Feature Summary

• High surge capability designed for demanding power applications
• Isolation type package featuring an electrically isolated base plate
• Not sensitive to electrostatic discharge

Diode Arrays Applications

• High current rectification in industrial power supplies
• Freewheeling diodes in motor drive circuits
• DC-DC converter output stages

Diode Arrays Procurement Notes

Verify the specific lead configuration before procurement, as the suffix R denotes reversed leads relative to standard versions. Confirm that the required reverse voltage rating of 35 V aligns with the circuit design parameters. Ensure compatibility with the specified thermal management requirements given the junction-to-case thermal resistance. Check for any updated discontinuation notices or alternative sourcing options due to potential lifecycle changes.

Diode Arrays Selection Notes

Select this component when a high-current Schottky rectifier with an isolated base is required. The 35 V rating suits low-voltage, high-amperage applications. Consider the reversed lead orientation if board layout constraints dictate. Evaluate the thermal performance against the system's heat dissipation capabilities, noting the 0.28 °C/W junction-to-case resistance. Ensure the operating environment stays within the -55 °C to +150 °C temperature range.

Diode Arrays Part Context

This module belongs to the MBRT600 series of silicon power Schottky diodes from GeneSiC Semiconductor. The series offers various voltage ratings from 20 V to 40 V while maintaining a consistent 600 A current capacity. These modules are engineered for robust performance in high-power density environments, leveraging Schottky technology for low forward voltage drop and fast switching characteristics.

Diode Arrays Replacement Considerations

Standard MBRT60035 without the R suffix may be used if lead orientation differences are accommodated in the design. Other variants in the MBRT600 series can replace this part if voltage ratings match or exceed the 35 V requirement.