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The MBT3904DW1T3G is a dual NPN bipolar junction transistor manufactured by onsemi, housed in a surface-mount US (SC-70-6) package. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device supports a collector-base voltage of 60 V and an emitter-base voltage of 6 V. Power dissipation is rated at 150 mW, with a minimum DC current gain (hFE) of 40. The transition frequency (fT) is specified at 100 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions for any updates to electrical parameters or mechanical dimensions prior to final procurement decisions.
Select this component when a dual NPN topology is required in a space-constrained surface-mount application. Compare power dissipation limits and thermal resistance against single-transistor alternatives if higher individual current handling is needed. Verify package compatibility with existing PCB footprints during the design phase.
This part belongs to the MBT3904 series of general-purpose NPN transistors. It shares core electrical characteristics with other variants like the MMBT3904 but utilizes a distinct dual-transistor package format. The DW1 suffix indicates specific manufacturing and packaging details defined by onsemi.
Direct pin-compatible substitutes include the MBT3904DW1T1G. Verify electrical parameter equivalence and package dimensions before substitution.