MBT3904DW1T3G

MBT3904DW1T3G

$0.16
  • Description:TRANS 2NPN 40V 200MA SC88/SC70
  • Series:-

SKU:5209af2c6b96 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN 40V 200MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:150mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

Download product information

MBT3904DW1T3G

Overview

The MBT3904DW1T3G is a dual NPN bipolar junction transistor manufactured by onsemi, housed in a surface-mount US (SC-70-6) package. It features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device supports a collector-base voltage of 60 V and an emitter-base voltage of 6 V. Power dissipation is rated at 150 mW, with a minimum DC current gain (hFE) of 40. The transition frequency (fT) is specified at 100 MHz. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Dual NPN configuration within a compact six-pin surface-mount package
  • High thermal stability supporting extended operating temperature ranges up to 150°C
  • General-purpose switching capability with defined saturation voltage characteristics

Applications

  • General-purpose signal switching circuits
  • Low-power amplifier stages
  • Digital logic interface buffers

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference datasheet revisions for any updates to electrical parameters or mechanical dimensions prior to final procurement decisions.

Selection Notes

Select this component when a dual NPN topology is required in a space-constrained surface-mount application. Compare power dissipation limits and thermal resistance against single-transistor alternatives if higher individual current handling is needed. Verify package compatibility with existing PCB footprints during the design phase.

Part Context

This part belongs to the MBT3904 series of general-purpose NPN transistors. It shares core electrical characteristics with other variants like the MMBT3904 but utilizes a distinct dual-transistor package format. The DW1 suffix indicates specific manufacturing and packaging details defined by onsemi.

Replacement Considerations

Direct pin-compatible substitutes include the MBT3904DW1T1G. Verify electrical parameter equivalence and package dimensions before substitution.

MBT3904DW1T3GMBT3904DW1T3G
$0.16
Buy Now