MC7252KDWAS-TP

FET, MOSFET Arrays Overview

The MC7252KDWAS-TP is a dual N/P-channel MOSFET manufactured by Micro Commercial Components. It integrates one N-channel and one P-channel enhancement-mode transistor within a compact SOT-363S surface-mount package. The device utilizes silicon technology and operates with a drain-source breakdown voltage of 60 V for both channels. Continuous drain current ratings are specified at 180 mA for the N-channel and 230 mA for the P-channel. The component supports a maximum power dissipation of 285 mW and functions reliably across an operating temperature range from -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel enhancement-mode transistors in a single compact package
• Designed for surface-mount assembly using standard SMD/SMT mounting techniques
• Constructed using silicon semiconductor technology for robust performance

FET, MOSFET Arrays Applications

• Low-side and high-side switching circuits
• Power management modules requiring complementary logic-level control
• Battery protection and load switch applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix KDWAS against official manufacturer documentation to confirm the SOT-363S package configuration. Ensure that ordering details align with the exact part number designation to avoid confusion with similar variants such as the KV-TP series. Cross-reference the datasheet for any recent product change notifications or compliance updates prior to final procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated dual-channel switching capabilities. The SOT-363S package offers a small footprint suitable for dense PCB layouts. Consider the 60 V breakdown voltage and low current ratings to ensure compatibility with the target circuit's electrical requirements and thermal constraints.

FET, MOSFET Arrays Part Context

This component belongs to the Micro Commercial Components discrete transistor portfolio, specifically categorized under MOSFETs. It serves as a compact solution for applications needing both N-type and P-type switching elements without occupying separate board areas. The dual configuration simplifies schematic design and reduces component count in complementary drive schemes.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.