MCAC3D8N04YHQ-TP

Single FETs, MOSFETs Overview

The MCAC3D8N04YHQ-TP is a single N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes split gate trench technology and is housed in a DFN5060 package. The device features a drain-source voltage of 40 V, a continuous drain current of 110 A at 25°C, and a maximum on-resistance of 3.8 mΩ at VGS=10V. It supports an operating junction temperature range from -55°C to +175°C with a total power dissipation of 83 W. Key dynamic parameters include a gate charge of 23 nC and a turn-off fall time of 8.3 ns.

Single FETs, MOSFETs Feature Summary

• Fully automotive qualified to AEC-Q101 standards
• Split gate trench MOSFET technology for high density cell design
• Moisture sensitivity level 1 classification
• Halogen-free green device with UL 94 V-0 flammability rating

Single FETs, MOSFETs Applications

• Automotive electronic systems requiring AEC-Q101 compliance
• High-density power switching applications
• Low RDS(on) power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the authenticity of the MCAC3D8N04YHQ-TP component through authorized MCC distributors or direct procurement channels. Counterfeit semiconductor parts pose significant risks; ensure traceability and adherence to MCC quality standards for handling and storage. Confirm that the ordering suffix indicates RoHS compliance as specified in official documentation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 40 V N-channel MOSFET with low on-resistance and high current capability in a compact DFN5060 footprint. Consider the thermal resistance characteristics and the specific gate charge requirements for driving efficiency. Ensure the application environment aligns with the specified operating temperature range and automotive qualification standards.

Single FETs, MOSFETs Part Context

This part belongs to the MCAC series of N-channel MOSFETs from Micro Commercial Components. It is designed using split gate trench technology to achieve ultra-low RDS(on) within a high-density cell structure. The device is specifically engineered for automotive and industrial applications demanding reliability and efficient power switching performance.

Single FETs, MOSFETs Replacement Considerations

Consult official MCC documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility without compromising circuit integrity.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the MCAC3D8N04YHQ-TP?

The maximum pulsed drain current (IDM) is rated at 440 A.

Is the MCAC3D8N04YHQ-TP suitable for automotive applications?

Yes, the device is fully automotive qualified to AEC-Q101 standards.

What is the reverse recovery time of the internal body diode?

The reverse recovery time (trr) is typically 25 ns.