MCACD014N10Y-TP

FET, MOSFET Arrays Overview

The MCACD014N10Y-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes split gate trench technology and is housed in a PDFN5060-8D package. Key electrical parameters include a drain-source voltage of 100 V, continuous drain current of 25 A per channel, and on-resistance of 11 mΩ at VGS=10V. The device supports a junction temperature range from -55°C to +150°C with a power dissipation of 83 W.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs within a single compact package.
• Split gate trench technology designed to achieve ultra-low on-resistance for improved efficiency.
• High-density cell design optimized for thermal performance and switching characteristics.

FET, MOSFET Arrays Applications

• Power management circuits requiring dual-channel isolation
• DC-DC converter topologies utilizing synchronous rectification
• Motor control systems needing integrated high-side and low-side switching

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity through authorized MCC distributors or direct procurement channels. Confirm the specific suffix designation matches the required RoHS compliance and packaging format. Ensure storage conditions adhere to moisture sensitivity level 1 requirements to prevent package damage during soldering processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-channel solution is necessary to save board space compared to discrete single MOSFETs. Evaluate the thermal resistance values against the expected ambient temperature and heat sinking capabilities. Consider the gate charge specifications relative to the driving circuit's switching frequency requirements.

FET, MOSFET Arrays Part Context

This part belongs to the MCACD series of dual MOSFETs from Micro Commercial Components. It shares the PDFN5060-8D footprint family with other variants like the MCACD033N10YL-TP, offering a standardized mounting solution for designers seeking integrated dual-channel power switching capabilities in modern electronic equipment.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible substitutes within the same manufacturer's lineup may exist but require verification of specific electrical ratings such as RDS(on) and current handling capacity. Cross-manufacturer replacements must match the PDFN5060-8D outline dimensions and internal pinout configuration precisely.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature is +150°C.

Does this component support avalanche energy?

Yes, the datasheet specifies a single pulse avalanche energy rating of 49 mJ under defined test conditions.

What is the reverse recovery time of the body diode?

The typical reverse recovery time (trr) is 41 ns.