FET, MOSFET Arrays MCACD085P10-TP product image

MCACD085P10-TP

$0.33
  • Description:IC
  • Series:-

SKU:751e326dfa13 Category: Brand:

  
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MCACD085P10-TP is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is IC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCACD085P10-TP

  • Description:IC
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Rds On (Max) @ Id, Vgs:85mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:44.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2110pF @ 50V
  • Power - Max:59.5W (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerLDFN
  • Supplier Device Package:PDFN5060-8D
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCACD085P10-TP

MCACD085P10-TP

FET, MOSFET Arrays Overview

The MCACD085P10-TP is a P-channel power MOSFET manufactured by Micro Commercial Components. It utilizes trench power LV MOSFET technology and is housed in a DFN3333-8 surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 100 V, a continuous drain current of 14 A, and a maximum on-resistance of 85 mOhms. The device supports a gate-source voltage of 20 V with a threshold voltage of 2.5 V. It features a gate charge of 47 nC, power dissipation of 34.7 W, and operates within a temperature range of -55 C to +150 C.

FET, MOSFET Arrays Feature Summary

  • Utilizes trench power LV MOSFET technology for enhanced performance
  • Designed as a single-channel P-channel enhancement mode device
  • Housed in a compact DFN3333-8 surface-mount package

FET, MOSFET Arrays Applications

  • Power management circuits requiring P-channel switching
  • Low voltage power applications utilizing trench technology

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet version and RoHS compliance details directly from the manufacturer before integration. Confirm that the DFN3333-8 package dimensions match your PCB footprint requirements. Ensure thermal management strategies account for the specified power dissipation limits under actual operating conditions.

FET, MOSFET Arrays Selection Notes

Select this component when a low-voltage P-channel MOSFET with high efficiency is required. The 85 mOhm on-resistance makes it suitable for applications prioritizing conduction loss reduction. Verify compatibility with standard logic levels given the 2.5 V threshold voltage specification.

FET, MOSFET Arrays Part Context

This part belongs to the MCC power MOSFET portfolio, specifically leveraging trench technology for low-voltage applications. It serves as a specialized solution for efficient power switching in compact form factors, distinct from general-purpose transistors or higher-voltage superjunction devices found in other product lines.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 100V rating, 14A current capacity, 85 mOhm Rds(on), and DFN3333-8 package constraints.

MCACD085P10-TPMCACD085P10-TP
$0.33
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