MCACD20N10YHE3-TP

FET, MOSFET Arrays Overview

The MCACD20N10YHE3-TP is a dual N-channel MOSFET array utilizing Split Gate Trench technology. It features a PDFN5060-8D package with a Drain-Source Voltage (VDS) of 100 V and a continuous drain current (ID) of 20 A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 22 mΩ at VGS=10V and ID=20A, with a total gate charge (Qg) of 17 nC. It supports an operating junction temperature range from -55°C to +150°C and includes a body diode with a reverse recovery time of 40 ns.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Split Gate Trench MOSFET technology for optimized performance
• AEC-Q101 qualified for automotive reliability standards
• High density cell design enabling low on-resistance

FET, MOSFET Arrays Applications

• Automotive power management systems
• Industrial motor control circuits
• Synchronous rectification applications
• DC/DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the component by checking for the specific MCC marking code and date code format. Ensure the ordering suffix matches the required RoHS compliance status. Purchase only from authorized distributors to guarantee traceability and avoid counterfeit parts. Confirm that the packaging meets the specified tape and reel requirements for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required within a limited footprint. The 100V rating and 20A current capability suit medium-power switching applications. Consider the thermal resistance characteristics and the specific RDS(on) values at your intended gate drive voltage. Verify compatibility with the target PCB layout dimensions for the PDFN5060-8D package.

FET, MOSFET Arrays Part Context

This part belongs to the MCACD series of dual MOSFETs from Micro Commercial Components. It shares the PDFN5060-8D form factor with other devices in the lineup but differs in voltage and current ratings. The series utilizes split gate trench technology to balance switching speed and conduction losses. It is designed for high-density power electronics requiring robust thermal performance.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the dual N-channel configuration, 100V VDS, and PDFN5060-8D package. Verify that substitute components meet or exceed the 20A continuous drain current and 22 mΩ RDS(on) specifications. Ensure the replacement part holds AEC-Q101 qualification if used in automotive contexts. Check for equivalent thermal resistance and gate charge parameters.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for the MCACD20N10YHE3-TP?

The maximum operating junction temperature is +150°C.

Is this component suitable for automotive applications?

Yes, the device is AEC-Q101 qualified for automotive grade reliability.

What is the reverse recovery time of the internal body diode?

The typical reverse recovery time (trr) is 40 ns.