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MCB85N06Y-TP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is MOSFET N-CH 60V 85A D2PAK. Review the specifications below when checking this part for your BOM.
The MCB85N06Y-TP is an N-channel MOSFET manufactured by Micro Commercial Components (MCC). It features a Drain-Source Voltage (VDS) of 60 V and a Continuous Drain Current (ID) of 85 A at TC=25°C. The device has a maximum Drain-Source On-Resistance (RDS(on)) of 2.5 mΩ at VGS=10V and ID=30A. Total Gate Charge (Qg) is 36 nC, with a Gate-Source Threshold Voltage (VGS(th)) ranging from 1 V to 2.4 V. It operates within a junction temperature range of -55°C to +175°C and utilizes a D2-PAK package.
Verify authenticity through authorized MCC distributors or direct purchase to avoid counterfeit components. Ensure the ordering suffix matches the required tape and reel quantity of 800 pieces per reel. Confirm RoHS compliance status via official documentation before integration into production lines.
Select this component for high-current applications requiring low on-resistance and fast switching speeds. Consider the thermal resistance of 1.76°C/W junction-to-case when designing heat dissipation strategies. Verify that the gate drive voltage supports the specified threshold and on-resistance characteristics for optimal performance.
This part belongs to the MCB series of N-channel MOSFETs from Micro Commercial Components. It is designed for general-purpose power switching applications. The device utilizes silicon technology and is housed in a surface-mount D2-PAK package suitable for automated assembly processes.
Consult official MCC documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as VDS, ID, RDS(on), and package type to ensure functional compatibility without modifying the existing circuit design.
The maximum pulsed drain current (IDM) is 150 A.
Yes, the single pulse avalanche energy (EAS) is rated at 290 mJ.
The reverse recovery time (trr) is 280 ns under specified test conditions.
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