MCCD2004-TP

FET, MOSFET Arrays Overview

The MCCD2004-TP is a dual N-channel power MOSFET in a DFN2030-6 package. It features a 20 V drain-source voltage rating and a continuous drain current of 10 A, with a pulsed current capacity of 40 A. The device utilizes advanced trench MOSFET process technology to achieve low on-resistance values, specifically 10 mΩ at VGS=10V and ID=8A. Key electrical parameters include a gate threshold voltage of 0.5 to 1 V, total gate charge of 18.5 nC, and input capacitance of 1955 pF. Thermal resistance from junction to ambient is rated at 125 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package
• Advanced trench MOSFET process technology for optimized performance
• Low thermal resistance junction-to-ambient rating for efficient heat dissipation
• Halogen-free construction available via specific ordering suffix

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Power management modules
• Load switching applications

FET, MOSFET Arrays Procurement Notes

Verify the exact part number against official Micro Commercial Components documentation before procurement. Confirm that the component meets your specific voltage and current requirements. Ensure sourcing channels are authorized distributors to guarantee product authenticity and traceability. Check for any specific environmental compliance markings required by your manufacturing standards.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required within space-constrained designs. The DFN2030-6 package offers a small footprint suitable for dense PCB layouts. Consider the 20 V rating and 10 A continuous current capability for low-voltage power applications. Evaluate the thermal performance characteristics against your system's heat dissipation capabilities.

FET, MOSFET Arrays Part Context

This component belongs to the Micro Commercial Components discrete semiconductor portfolio. It is designed as a dual MOSFET solution to save board space compared to using two separate single devices. The DFN2030-6 package provides a robust surface-mount option for modern electronics manufacturing processes.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the MCCD2004-TP?

The maximum pulsed drain current (IDM) is rated at 40 A.

How can I obtain a halogen-free version of this component?

A halogen-free version is available by adding the '-HF' suffix to the part number, resulting in MCCD2004-TP-HF.

What is the typical gate threshold voltage range?

The gate threshold voltage (VGS(th)) ranges from a minimum of 0.5 V to a maximum of 1 V under specified test conditions.