MCG55P02A-TP

Single FETs, MOSFETs Overview

The MCG55P02A-TP is a P-channel MOSFET manufactured by Micro Commercial Components (MCC) utilizing Trench Power LV MOSFET technology. It features a DFN3333 package with maximum ratings of -20V Drain-Source Voltage, ±10V Gate-Source Voltage, and -16A Continuous Drain Current. The device achieves low on-resistance values ranging from 6.5mΩ to 15mΩ depending on gate drive conditions. Key electrical parameters include a breakdown voltage of -20V, a continuous body diode current of -55A, and a single pulsed avalanche energy capability of 98mJ.

Single FETs, MOSFETs Feature Summary

• Trench Power LV MOSFET Technology for optimized performance
• High density cell design engineered for low RDS(ON)
• Package structure designed for efficient heat dissipation
• Moisture Sensitivity Level 1 classification

Single FETs, MOSFETs Applications

• Power management circuits requiring low voltage switching
• DC-DC converter topologies
• Load switch applications in portable electronics

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity through authorized MCC distributors or direct procurement channels to ensure traceability and compliance with quality standards. Confirm that the ordering suffix indicates RoHS compliance and halogen-free status as specified in the manufacturer documentation. Review the general terms and conditions regarding liability and product usage restrictions before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component based on its specific -20V rating and DFN3333 footprint requirements. Evaluate thermal resistance characteristics against the target application's board design and ambient temperature constraints. Consider the gate threshold voltage range and total gate charge when designing the driving circuitry to ensure optimal switching speeds and minimize power losses during operation.

Single FETs, MOSFETs Part Context

This part belongs to the MCC P-Channel MOSFET series, specifically designed for low voltage applications. It utilizes silicon technology within a surface-mount DFN3333 package. The device is intended for use in environments where compact size and efficient thermal management are critical, serving as a replacement for larger packages in space-constrained electronic designs.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature for the MCG55P02A?

The maximum allowed junction temperature for the MCG55P02A is 150°C.

Does the MCG55P02A support avalanche energy?

Yes, the device has a rated Single Pulsed Avalanche Energy of 98mJ under specific test conditions.

What is the reverse recovery time of the internal body diode?

The reverse recovery time (trr) of the continuous body diode is 122 ns.