MCGD25N04-TP

FET, MOSFET Arrays Overview

The MCGD25N04-TP is a dual N-channel MOSFET array in an 8-pin DFN3333-D package. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 25A at TC=25°C. The device utilizes Trench Power LV MOSFET technology to achieve low on-resistance, specified as 18mΩ max at VGS=10V and 24mΩ max at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1 to 2.5V, total gate charge of 24.5nC, and a power dissipation rating of 15.8W. Thermal resistance is 7°C/W junction-to-case.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package for space-constrained designs.
• Trench Power LV MOSFET technology ensures low conduction losses and efficient switching performance.
• Robust thermal management capabilities with a low junction-to-case thermal resistance value.
• Compliant with RoHS standards and manufactured as a halogen-free green device.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring high efficiency and compact form factors.
• Power management modules in portable electronic devices.
• Low-voltage load switching applications in consumer electronics.
• Battery protection circuits within mobile communication equipment.

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the marking code against official MCC documentation. Ensure the ordering suffix matches the required tape and reel quantity. Confirm that the supplier is an authorized distributor to avoid counterfeit parts. Review the latest datasheet revision for any updates to electrical characteristics or mechanical dimensions before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel isolation in a minimal footprint. Evaluate the thermal requirements based on the 7°C/W junction-to-case resistance and the intended operating temperature range. Consider the gate threshold voltage limits when designing drive circuits to ensure reliable turn-on at various logic levels. Assess the safe operating area curves to guarantee stability under pulsed load conditions.

FET, MOSFET Arrays Part Context

This part belongs to Micro Commercial Components' discrete semiconductor lineup, specifically within their MOSFET transistor category. It is designed for general-purpose power switching in modern electronic systems. The DFN3333-D package provides enhanced heat dissipation compared to standard small signal packages, supporting higher current densities in compact layouts.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps if considering alternative manufacturers. Consult MCC directly for potential cross-reference recommendations.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the MCGD25N04-TP?

The maximum continuous drain current is 25A when the case temperature is maintained at 25°C.

Does the MCGD25N04-TP support avalanche energy?

Yes, the device has a rated single pulsed avalanche energy of 25 mJ.

What is the body diode reverse recovery time?

The typical reverse recovery time (trr) of the continuous body diode is 17.5 ns.