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The MCH6001-TL-E is an RF bipolar transistor manufactured by onsemi, featuring a dual NPN configuration in a 6-MCPH surface-mount package. It operates with a collector-emitter breakdown voltage of 8 V and supports a maximum continuous collector current of 150 mA. The device achieves a transition frequency of 16 GHz, making it suitable for high-frequency applications. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 50 mA and 5 V, a maximum power dissipation of 600 mW, and a typical noise figure of 1.2 dB at 1 GHz. The component functions reliably within a junction temperature range up to +150°C.
Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and compliance status. Confirm that the 6-MCPH package dimensions align with the target PCB layout constraints. Cross-reference the RoHS and REACH declarations with current regulatory requirements before finalizing procurement specifications.
Select this component when a dual NPN configuration is required for space-constrained RF designs. Ensure the circuit design accommodates the 8 V collector-emitter voltage limit and 150 mA current rating. Evaluate thermal management strategies to maintain junction temperatures below the 150°C maximum while accounting for the 600 mW power dissipation capability.
This part belongs to the MCH6001 series of RF bipolar transistors from onsemi. The series focuses on providing dual transistor solutions in small form factors for wireless infrastructure. The MCH6001 variant specifically targets applications requiring high linearity and low noise figures in the microwave spectrum.
Publicly confirmed substitute part numbers are not available in the provided source material.