MCH6001-TL-E

MCH6001-TL-E

$0.84
  • Description:RF TRANS 2 NPN 8V 16GHZ 6-MCPH
  • Series:-

SKU:9b3b9e58d6a0 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS 2 NPN 8V 16GHZ 6-MCPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):8V
  • Frequency - Transition:16GHz
  • Noise Figure (dB Typ @ f):1.2dB @ 1GHz
  • Gain:16dB
  • Power - Max:600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 50mA, 5V
  • Current - Collector (Ic) (Max):150mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:6-MCPH
  • Grade:-
  • Qualification:-

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MCH6001-TL-E

Overview

The MCH6001-TL-E is an RF bipolar transistor manufactured by onsemi, featuring a dual NPN configuration in a 6-MCPH surface-mount package. It operates with a collector-emitter breakdown voltage of 8 V and supports a maximum continuous collector current of 150 mA. The device achieves a transition frequency of 16 GHz, making it suitable for high-frequency applications. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 50 mA and 5 V, a maximum power dissipation of 600 mW, and a typical noise figure of 1.2 dB at 1 GHz. The component functions reliably within a junction temperature range up to +150°C.

Feature Summary

  • Dual NPN architecture integrated into a compact surface-mount footprint
  • High-speed operation capability defined by a 16 GHz transition frequency
  • Low noise performance optimized for radio frequency signal processing

Applications

  • Radio frequency amplification stages
  • Microwave communication systems
  • High-frequency signal processing circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to ensure correct packaging and compliance status. Confirm that the 6-MCPH package dimensions align with the target PCB layout constraints. Cross-reference the RoHS and REACH declarations with current regulatory requirements before finalizing procurement specifications.

Selection Notes

Select this component when a dual NPN configuration is required for space-constrained RF designs. Ensure the circuit design accommodates the 8 V collector-emitter voltage limit and 150 mA current rating. Evaluate thermal management strategies to maintain junction temperatures below the 150°C maximum while accounting for the 600 mW power dissipation capability.

Part Context

This part belongs to the MCH6001 series of RF bipolar transistors from onsemi. The series focuses on providing dual transistor solutions in small form factors for wireless infrastructure. The MCH6001 variant specifically targets applications requiring high linearity and low noise figures in the microwave spectrum.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

MCH6001-TL-EMCH6001-TL-E
$0.84
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