MCH6421-TL-E

Single FETs, MOSFETs Overview

The MCH6421-TL-E is an N-channel enhancement mode Power MOSFET manufactured by onsemi. It utilizes the company's proprietary trench technology to achieve low on-resistance and minimized gate charge, optimizing switching performance and efficiency. The device is rated for a maximum drain-source voltage of 20 V and supports a continuous drain current of 5.5 A at ambient temperature. It features a surface-mount 6-MCPH package with a power dissipation capability of 1.5 W and operates within a temperature range up to +150 °C.

Single FETs, MOSFETs Feature Summary

• Trench technology design for low on-resistance and reduced gate charge
• Enhancement mode operation optimized for efficient switching
• Surface-mount packaging suitable for automated assembly

Single FETs, MOSFETs Applications

• Low-voltage DC-DC converter circuits
• Load switching applications in portable electronics
• Power management modules requiring compact form factors

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the TL-E suffix to ensure correct tape-and-reel packaging configuration. Confirm that the requested quantity aligns with standard reel sizes if high-volume procurement is intended. Cross-reference the specific datasheet revision to ensure compatibility with current manufacturing standards and environmental compliance requirements before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 20 V rating with moderate current handling capabilities. The low gate charge characteristic makes it suitable for high-frequency switching applications where drive losses are a concern. Ensure thermal management strategies account for the 1.5 W power dissipation limit in the specified package to maintain reliability under load conditions.

Single FETs, MOSFETs Part Context

This MOSFET belongs to onsemi's portfolio of discrete power semiconductors designed for general-purpose switching. It leverages advanced trench gate technology to deliver improved performance metrics compared to traditional planar devices. The product line targets cost-sensitive applications in consumer and industrial markets where space constraints and energy efficiency are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains identical voltage, current, and package specifications to guarantee mechanical and electrical compatibility without redesigning the PCB layout or driver circuitry.