MCH6602-TL-E

FET, MOSFET Arrays Overview

The MCH6602-TL-E is a dual N-channel power MOSFET manufactured by onsemi, housed in an MCPH6 package. It features a drain-to-source voltage (V_DSS) of 30 V and a continuous DC drain current (I_D) of 0.35 A. The device supports a pulsed drain current of 1.4 A with a pulse width up to 10 μs. Key electrical characteristics include a maximum static drain-to-source on-state resistance (R_DS(on)) of 3.7 Ω at V_GS = 4 V and I_D = 80 mA. The component operates within a channel temperature range of -55 °C to +150 °C and offers ultrahigh-speed switching capabilities.

FET, MOSFET Arrays Feature Summary

• Composite design integrating two N-channel MOSFETs into a single package for high-density mounting
• Optimized for low ON-resistance to minimize conduction losses
• Capable of ultrahigh-speed switching operations
• Supports drive voltages as low as 1.5 V

FET, MOSFET Arrays Applications

• Low-voltage power management circuits
• High-density surface-mount applications requiring compact dual-transistor solutions
• Switching regulators and converters operating at low gate drive levels

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TL-E to confirm the tape-and-reel packaging format containing 3,000 pieces per reel. Ensure that handling procedures account for the device's ESD immunity rating of less than 200V under the Machine Model standard. Confirm that the procurement source provides the official datasheet No. 6445-1/6 for accurate technical validation prior to integration.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint MCPH6 package. Evaluate the R_DS(on) specifications against the target load current and gate drive voltage, noting that resistance increases significantly at lower V_GS levels such as 1.5 V or 2.5 V. Consider the 0.35 A continuous current limit and thermal dissipation requirements for the intended application environment.

FET, MOSFET Arrays Part Context

This part belongs to the MCH6602 series of N-channel power MOSFETs from onsemi. It utilizes the MCPH6 package, which corresponds to JEITA/JEDEC standards SC-88, SC-70-6, and SOT-363. The device is designed for general-purpose switching applications where space constraints and low drive voltage compatibility are critical design factors.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 30 V V_DSS, dual N-channel topology, and MCPH6/SOT-363 package dimensions. Verify that alternative components support similar low-voltage drive characteristics (1.5 V to 4 V) and comparable R_DS(on) values at the specific operating currents defined in the original design.

FET, MOSFET Arrays FAQ

What is the ESD immunity rating for the MCH6602?

The device is designed for ESD immunity of less than 200V according to the Machine Model standard.

How does the gate drive voltage affect the on-state resistance?

The R_DS(on) varies significantly with V_GS; it is specified as 3.7 Ω max at 4 V, but increases to 12.8 Ω max at 1.5 V.

What is the maximum allowable power dissipation?

The allowable power dissipation is 0.8 W when mounted on a ceramic substrate measuring 900 mm² × 0.8 mm.