MCH6613-TL-E

FET, MOSFET Arrays Overview

The MCH6613-TL-E is a complementary dual MOSFET in an MCPH6 package, integrating N-channel and P-channel elements for high-density mounting. The N-channel device supports a drain-source voltage of 30V with a maximum DC current of 0.35A and a typical on-resistance of 3.7Ω at VGS=4V. The P-channel counterpart provides -30V breakdown and -0.2A DC current capability, featuring a typical on-resistance of 10.4Ω at VGS=-4V. Both channels exhibit low gate charge (1.58nC N-channel, 1.43nC P-channel) and fast switching times, enabling efficient operation with 1.5V drive levels.

FET, MOSFET Arrays Feature Summary

• Integrates N-channel and P-channel low ON-resistance MOSFETs within a single compact package to enable high-density circuit board mounting.
• Supports low-voltage logic control through optimized performance characteristics at a 1.5V gate-to-source drive level.

FET, MOSFET Arrays Applications

• High-density surface-mount power switching circuits
• Low-voltage signal or power path management requiring complementary pairs
• Battery-powered portable devices utilizing minimal drive voltages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TL-E against the manufacturer's official documentation to confirm the tape-and-reel shipping configuration and quantity. Ensure that the MCPH6 package dimensions align with the target PCB land pattern requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N-channel and P-channel pair is required in a minimal footprint. Verify that the application operates within the 30V drain-source voltage limits and that the thermal dissipation capabilities on the intended substrate can handle the specified allowable power loss.

FET, MOSFET Arrays Part Context

This part belongs to the MCH6613 series of complementary dual MOSFETs manufactured by onsemi. It utilizes the MCPH6 package, which corresponds to industry-standard SC-88, SC-70-6, or SOT-363 form factors, designed specifically for applications demanding space-efficient integration of paired switching elements.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the MCPH6/SC-70-6 package outline and provide comparable 30V ratings with integrated N/P channel functionality. Verify pinout compatibility, specifically Source-Gate-Drain arrangements, and ensure equivalent RDS(on) values are met for the target drive voltage conditions.