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MCH6630-TL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Sanyo. Its product description is MOSFET N-CH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MCH6630-TL-E
- Description：MOSFET N-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MCH6630-TL-E
FET, MOSFET Arrays Overview
The MCH6630-TL-E is a dual-channel N-channel and P-channel MOS field-effect transistor manufactured by Sanyo Semiconductor. It integrates two separate elements within a single package to facilitate high-density mounting. The device utilizes metal-oxide semiconductor technology and operates in depletion mode. Key electrical characteristics include a maximum drain-source voltage of 20 V for the N-channel and -12 V for the P-channel, with continuous drain currents rated at 1.6 A and 1.5 A respectively. The component features a low on-resistance of 0.245 Ω and supports operation up to a junction temperature of 150 °C.
FET, MOSFET Arrays Feature Summary
- Integrates N-channel and P-channel MOSFETs into a single compact package for space-efficient circuit design
- Optimized for ultra-fast switching performance suitable for general-purpose applications
- Capable of driving loads with a supply voltage as low as 2.5 V
FET, MOSFET Arrays Applications
- General-purpose switching devices
- High-density surface mount assemblies
- Low-voltage drive circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering code against official Sanyo Semiconductor documentation to ensure correct variant selection. Confirm that the requested part matches the required pin configuration and thermal specifications. Cross-reference the manufacturer's datasheet for absolute maximum ratings to prevent operational exceedance during integration.
FET, MOSFET Arrays Selection Notes
Select this component when a complementary pair of N-channel and P-channel transistors is required in a minimal footprint. Ensure the application demands the specified 20 V and -12 V breakdown voltages. Verify that the 0.245 Ω on-resistance meets the efficiency requirements for the intended load current levels.
FET, MOSFET Arrays Part Context
This device belongs to the series of composite MOSFETs designed for efficient power management in small form factors. It represents Sanyo's approach to combining complementary channel types to simplify board layout and reduce component count in switching applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
