MCH6660-TL-W

Description：MOSFET N/P-CH 20V 2A/1.5A 6MCPH
Series：-

SKU:e324738cd817 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

MCH6660-TL-W is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 2A/1.5A 6MCPH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCH6660-TL-W

Description：MOSFET N/P-CH 20V 2A/1.5A 6MCPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：2A, 1.5A
Rds On (Max) @ Id, Vgs：136mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：128pF @ 10V
Power - Max：800mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, Flat Leads
Supplier Device Package：6-MCPH
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for MCH6660-TL-W

MCH6660-TL-W

FET, MOSFET Arrays Overview

The MCH6660-TL-W is a complementary dual power MOSFET in an MCPH package, designed for general-purpose switching applications. It integrates an N-channel and P-channel device with a maximum drain-source voltage of 20V. The N-channel exhibits a typical on-resistance of 136mΩ at 2A, while the P-channel shows 266mΩ at -1.5A. The component supports full 1.8V gate drive capability, ensuring compatibility with low-voltage logic interfaces. It features a maximum power dissipation of 800mW and operates within a junction temperature range up to +150°C.

FET, MOSFET Arrays Feature Summary

Complementary dual configuration integrating N-channel and P-channel MOSFETs in a single compact package
Full 1.8V gate drive capability for direct interface with low-voltage digital control signals
Optimized on-resistance characteristics supporting efficient general-purpose switching operations

FET, MOSFET Arrays Applications

General-purpose switching device applications
Low-voltage DC-DC converter circuits
Battery protection and management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the procurement channel provides valid traceability documentation. Note that this device may be subject to discontinuation status; consult the manufacturer's lifecycle announcements prior to finalizing supply agreements to mitigate obsolescence risks.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require integrated complementary switching functionality. The 20V rating suits low-voltage systems, while the 1.8V drive threshold enables efficient control from modern microcontrollers. Evaluate thermal performance carefully due to the small footprint and 800mW dissipation limit in high-frequency switching environments.

FET, MOSFET Arrays Part Context

This part belongs to onsemi’s portfolio of intelligent power solutions, leveraging advanced BCD process technologies for robust reliability. It serves as a discrete alternative to complex driver ICs in simple switching topologies. The MCPH package offers a surface-mount solution optimized for automated assembly processes in consumer and industrial electronics manufacturing lines.