FET, MOSFET Arrays MCH6661-TL-W product image

MCH6661-TL-W

  • Description:MOSFET 2N-CH 30V 1.8A SC88FL
  • Series:-

SKU:1680febb7a00 Category: Brand:

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MCH6661-TL-W is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 1.8A SC88FL. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCH6661-TL-W

  • Description:MOSFET 2N-CH 30V 1.8A SC88FL
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.8A
  • Rds On (Max) @ Id, Vgs:188mOhm @ 900mA, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:88pF @ 10V
  • Power - Max:800mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88FL/MCPH6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCH6661-TL-W

MCH6661-TL-W

FET, MOSFET Arrays Overview

The MCH6661-TL-W is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a dual configuration within a SOT-363 (SC-88) surface-mount package with six pins. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 1.8 A. Key electrical parameters include a maximum drain-source resistance of 378 mΩ, a gate-source threshold voltage up to 2.6 V, and a typical gate charge of 2 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 800 mW.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel architecture integrated into a compact SOT-363 package for space-constrained designs.
  • Enhancement mode operation optimized for low-voltage switching applications.
  • High thermal stability supporting junction temperatures up to +150 °C.

FET, MOSFET Arrays Applications

  • Battery protection circuits
  • Power management systems
  • Signal switching

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix TL-W against official datasheets to confirm packaging and tape-and-reel specifications. Ensure compatibility with standard SMT assembly processes for the SOT-363 footprint. Cross-reference RoHS compliance status with current manufacturer declarations prior to procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Compare Rds(on) and gate charge values against alternative SOT-363 devices to ensure efficiency targets are met. Confirm that the 30 V breakdown voltage aligns with the system's maximum operating voltage requirements.

FET, MOSFET Arrays Part Context

This part belongs to the onsemi MOSFET portfolio, specifically designed for general-purpose switching. The MCH6661 series utilizes silicon technology to provide reliable performance in consumer electronics and industrial control applications requiring efficient power handling in small packages.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence before considering any alternative components from other manufacturers.

MCH6661-TL-WMCH6661-TL-W

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