FET, MOSFET Arrays MCH6663-TL-H product image

MCH6663-TL-H

  • Description:MOSFET N/P-CH 30V 1.8A 6MCPH
  • Series:-

SKU:67c9a765fbfa Category: Brand:

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MCH6663-TL-H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 1.8A 6MCPH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCH6663-TL-H

  • Description:MOSFET N/P-CH 30V 1.8A 6MCPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.8A, 1.5A
  • Rds On (Max) @ Id, Vgs:188mOhm @ 900mA, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:88pF @ 10V
  • Power - Max:800mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, Flat Leads
  • Supplier Device Package:6-MCPH
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCH6663-TL-H

MCH6663-TL-H

FET, MOSFET Arrays Overview

The MCH6663-TL-H is a complementary dual MOSFET from onsemi, integrating an N-channel and P-channel device in a single MCPH6 (SC-88/SC-70-6/SOT-363) package. The N-channel component provides a drain-source voltage of 30 V and a continuous current of 1.8 A, with a typical RDS(on) of 145 mΩ at 10 V gate drive. The P-channel counterpart offers -30 V and -1.5 A ratings, featuring a typical RDS(on) of 250 mΩ at -10 V. Both transistors support low-voltage operation down to 4 V, with total gate charges of 2.0 nC for the N-channel and 2.2 nC for the P-channel.

FET, MOSFET Arrays Feature Summary

  • Complementary dual configuration combining N-channel and P-channel MOSFETs in a compact surface-mount package
  • Capable of full logic-level switching with effective performance at 4 V gate drive voltages
  • Optimized for high-speed applications through minimized total gate charge and fast switching times

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification circuits
  • Low-voltage load switch implementations
  • Battery-powered portable electronic devices requiring space-efficient power management

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'TL' designation indicates tape and reel packaging, while 'TW' denotes cut tape. Confirm that the required quantity aligns with the standard shipping unit of 3,000 pieces per reel for the TL variant. Ensure compliance with Pb-Free and Halogen-Free material requirements as specified by the manufacturer.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring matched N-channel and P-channel characteristics within a minimal footprint. Evaluate the thermal resistance of 156.25 °C/W against the system's heat dissipation capabilities. Consider the 4 V drive capability if the control logic operates at lower voltage levels than standard 5 V or 10 V interfaces.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal complementary MOSFETs designed for efficient power switching in limited board areas. It utilizes the MCPH6 package, which corresponds to industry-standard SC-88, SC-70-6, and SOT-363 form factors. The device serves as a direct integration solution for half-bridge and synchronous rectifier topologies.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other SC-88 complementary MOSFET pairs offering similar 30 V ratings. Verify pinout compatibility between Source1, Gate1, Drain2, Source2, Gate2, and Drain1 to ensure seamless substitution without PCB redesign.

MCH6663-TL-HMCH6663-TL-H

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