MCH6663-TL-W

FET, MOSFET Arrays Overview

The MCH6663-TL-W is a dual P-channel MOSFET manufactured by onsemi, housed in an SOT-363-6 surface-mount package. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 1.5 A. The device exhibits a maximum on-resistance (Rds(on)) of 641 mΩ at a gate-source voltage (Vgs) of -4.5 V. Gate threshold voltage (Vgs(th)) ranges from 1.2 V to 2.4 V, with a typical gate charge (Qg) of 2.2 nC. Operating temperatures span from -55°C to +150°C junction temperature, with power dissipation rated at 800 mW.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent P-channel enhancement-mode transistors within a compact six-terminal leadframe.
• Optimized for low gate charge characteristics to facilitate efficient switching performance in high-frequency applications.
• Designed for robust operation across extended industrial temperature ranges with enhanced thermal stability.

FET, MOSFET Arrays Applications

• Battery protection circuits requiring dual-switch isolation
• Load switching in portable consumer electronics
• Power management modules in mobile communication devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm RoHS compliance status via the manufacturer's latest documentation before integration. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in an SOT-363 footprint. Compare Rds(on) and Qg values against alternative packages if higher current capacity or lower switching losses are needed. Verify that the 30 V rating aligns with system voltage peaks and transient conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's general-purpose discrete MOSFET portfolio, designed for space-constrained applications. The SOT-363 package allows for high-density PCB layouts compared to larger transistor packages. It serves as a complementary switch in logic-level control circuits where dual polarity or redundant switching paths are necessary.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Consult official cross-reference tools for equivalent dual P-channel MOSFETs in SOT-363 packages with matching electrical specifications.