FET, MOSFET Arrays MCH6664-TL-W product image

MCH6664-TL-W

  • Description:MOSFET 2P-CH 30V 1.5A SC88FL
  • Series:-

SKU:24e49d074316 Category: Brand:

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MCH6664-TL-W is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 1.5A SC88FL. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MCH6664-TL-W

  • Description:MOSFET 2P-CH 30V 1.5A SC88FL
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.5A
  • Rds On (Max) @ Id, Vgs:325mOhm @ 800mA, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:2.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:82pF @ 10V
  • Power - Max:800mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88FL/MCPH6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MCH6664-TL-W

MCH6664-TL-W

FET, MOSFET Arrays Overview

The MCH6664-TL-W is a dual P-channel enhancement mode MOSFET manufactured by onsemi, housed in a surface-mount SOT-363 (SC-88) package with six pins. It features a maximum drain-source voltage of 30 V and a continuous drain current of 1.5 A. The device exhibits a maximum on-resistance of 641 mΩ and a typical gate charge of 2.2 nC at 10 V. Rated for power dissipation up to 800 mW, it operates within a temperature range of -55 °C to +150 °C, with a maximum gate-source voltage of ±20 V.

FET, MOSFET Arrays Feature Summary

  • Dual independent P-channel configuration within a compact six-pin surface-mount footprint
  • Optimized for low gate charge to facilitate efficient switching performance
  • Enhanced thermal stability supporting operation up to 150 °C junction temperature

FET, MOSFET Arrays Applications

  • Low-side load switching in portable electronic devices
  • Power management circuits in battery-operated equipment
  • General-purpose signal switching in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact tape-and-reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure the component matches the required SOT-363 pinout and electrical ratings before integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. Compare the 641 mΩ on-resistance against circuit load requirements to ensure acceptable conduction losses. Verify that the 30 V breakdown voltage exceeds the maximum operating voltage of the application.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's discrete MOSFET portfolio designed for space-constrained applications. The SOT-363 package allows for high-density PCB layouts compared to larger transistor packages. It serves as a complementary switch element in power distribution networks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference lists from the manufacturer for verified alternatives.

MCH6664-TL-WMCH6664-TL-W

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