MCQ03N06-TP-HF

FET, MOSFET Arrays Overview

The MCQ03N06-TP-HF is a dual N-channel power MOSFET manufactured by Micro Commercial Components (MCC). It utilizes advanced trench MOSFET process technology and is housed in an SOP-8 package. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 3.0 A, and pulsed drain current of 10 A. The device features a maximum power dissipation of 1.7 W and operates within a junction temperature range of -55°C to +150°C. Static characteristics specify a typical on-resistance of 105 mΩ at VGS=10V and 125 mΩ at VGS=4.5V. Dynamic performance includes a total gate charge of 6 nC and turn-off fall time of 10 ns.

FET, MOSFET Arrays Feature Summary

• Dual configuration providing two independent N-channel MOSFETs in a single package
• Advanced trench MOSFET process technology for optimized performance
• Halogen-free "Green" device construction with UL 94 V-0 flammability rating epoxy

FET, MOSFET Arrays Applications

• Power switching circuits requiring dual channel isolation
• DC-DC converter topologies utilizing synchronized rectification
• Motor control applications involving low-voltage drive stages

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the MCQ03N06-TP-HF component through authorized MCC distributors or direct procurement channels. Counterfeit semiconductor parts pose significant risks; ensure traceability meets MCC quality standards. Confirm that the ordering suffix corresponds to the Tape & Reel packing format containing 4000 pieces per reel as specified in official documentation.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power management. The SOP-8 package offers thermal resistance of 73.5°C/W junction to ambient. Ensure the application voltage does not exceed the 60 V breakdown limit and that thermal design accommodates the 1.7 W power dissipation capability under operating conditions.

FET, MOSFET Arrays Part Context

This part belongs to the MCC dual MOSFET series designed for surface-mount assembly. The SOP-8 footprint facilitates automated placement while maintaining adequate thermal performance for general-purpose switching applications. The device integrates body diodes suitable for freewheeling operations in inductive load circuits.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are documented for this specific component.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the MCQ03N06?

The maximum pulsed drain current is 10 A, measured with a pulse width of 300 µs or less and a duty cycle of 0.5% or less.

Does the MCQ03N06 contain internal body diodes?

Yes, the datasheet specifies a Diode Forward Voltage (VSD) of 1.2 V at IS=3A, indicating the presence of intrinsic body diodes for each channel.

What is the moisture sensitivity level of this device?

The device has a Moisture Sensitivity Level of 1, indicating it is not susceptible to moisture damage during standard manufacturing processes.