MCQD05N06-TP

FET, MOSFET Arrays Overview

The MCQD05N06-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Trench Power MV technology and features a high-density cell design for low RDS(on). The device is housed in an SOP-8 package. Key electrical parameters include a Drain-Source Voltage of 60 V, a continuous Drain Current of 3.1 A at 25°C, and a typical RDS(on) of 27 mΩ at VGS=10V. Total power dissipation is rated at 1.6 W with a thermal resistance of 78°C/W junction to ambient. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a single SOP-8 package
• Trench Power MV MOSFET technology for optimized performance
• High density cell design engineered for low on-resistance
• Moisture Sensitivity Level 1 classification

FET, MOSFET Arrays Applications

• DC-DC converters
• Power switching applications
• Load switches

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the MCQD05N06-TP component by purchasing directly from Micro Commercial Components or their authorized distributors. Counterfeit parts pose significant risks; MCC does not provide warranty coverage for unauthorized sources. Ensure the ordering suffix matches the required tape and reel quantity of 4000 pieces per reel as specified in the official documentation.

FET, MOSFET Arrays Selection Notes

Select the MCQD05N06-TP when a compact dual N-channel solution is required for low-voltage power management. The SOP-8 package facilitates surface mount assembly. Consider the 60 V breakdown voltage and 3.1 A current rating against specific circuit load requirements. The 78°C/W thermal resistance dictates the need for adequate PCB copper area for heat dissipation.

FET, MOSFET Arrays Part Context

This component belongs to the MCQD series of dual MOSFETs produced by Micro Commercial Components. It is designed for general-purpose power switching where space efficiency is critical. The device integrates two independent N-channel MOSFETs into one footprint, simplifying board layout compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Consult official datasheets for pin-compatible alternatives such as the MCQD09N06Y-TP. Verify that substitute devices meet or exceed the 60 V drain-source voltage and 3.1 A continuous current requirements. Confirm package compatibility and thermal characteristics before implementation.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the device support pulsed avalanche energy?

Yes, the single pulsed avalanche energy rating is 30 mJ under specified test conditions.

What is the packaging format?

The device is supplied in Tape & Reel format with 4000 pieces per reel.