MCQD08N06-TP

FET, MOSFET Arrays Overview

The MCQD08N06-TP is a dual N-channel power MOSFET manufactured by Micro Commercial Components (MCC). It utilizes trench power LV MOSFET technology and features a high-density cell design for low RDS(on). The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a drain-source voltage (VDS) of 60 V, continuous drain current (ID) of 8 A at 25°C, and a maximum on-resistance (RDS(on)) of 22 mΩ at VGS=10V. Total gate charge (Qg) is 41.9 nC. The component is housed in an SOP-8 package with a maximum thermal resistance of 77°C/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single SOP-8 package
• Trench power LV MOSFET technology for optimized performance
• High-density cell design engineered to minimize on-resistance
• Halogen-free construction with UL 94 V-0 flammability rating

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Power switching applications
• Load switch implementations

FET, MOSFET Arrays Procurement Notes

Verify the authenticity of the MCQD08N06-TP by purchasing directly from Micro Commercial Components or their authorized distributors. Counterfeit components pose significant risks; MCC does not provide warranty coverage for parts acquired from unauthorized sources. Ensure that the ordering suffix matches the specified tape and reel packaging format containing 4000 pieces per reel.

FET, MOSFET Arrays Selection Notes

Select the MCQD08N06-TP when a dual N-channel MOSFET solution is required in a compact SOP-8 footprint. The device supports a 60 V drain-source voltage and 8 A continuous current. Consider the 22 mΩ maximum on-resistance and 41.9 nC total gate charge for efficiency and drive requirements. Verify compatibility with the operating temperature range of -55°C to +150°C.

FET, MOSFET Arrays Part Context

This component belongs to the MCQD series of dual N-channel power MOSFETs produced by Micro Commercial Components. The series employs trench technology to achieve low on-resistance within small surface-mount packages. The MCQD08N06-TP specifically provides dual channels in an SOP-8 housing, designed for general-purpose power switching and load management tasks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum thermal resistance of the MCQD08N06-TP?

The maximum thermal resistance from junction to ambient is 77°C/W, measured with the device mounted on a 1in² FR-4 board with 2oz copper in still air at 25°C.

Does the MCQD08N06-TP meet RoHS standards?

Yes, the 'TP' suffix designates that the device is lead-free finish and RoHS compliant.

What is the avalanche energy rating for this component?

The repetitive avalanche energy (EAS) rating is 49 mJ, tested under conditions of TJ=25°C, VDD=50V, VGS=10V, and L=0.5mH.