ChipApex | Global Electronic Components Supplier
MCR8DSMT4G
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SCR 600V 8A DPAK
- Series：-
- Mfr：Littelfuse Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Voltage - Off State：600 V
- Voltage - Gate Trigger (Vgt) (Max)：1 V
- Current - Gate Trigger (Igt) (Max)：200 µA
- Current - Hold (Ih) (Max)：6 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：90A @ 60Hz
- SCR Type：Sensitive Gate
- Operating Temperature：-40°C ~ 110°C
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Voltage - On State (Vtm) (Max)：1.8 V
- Current - On State (It (AV)) (Max)：5.1 A
- Current - On State (It (RMS)) (Max)：8:00 AM
- Current - Off State (Max)：10 µA
Download product information
Overview
The MCR8DSMT4G is a surface-mount sensitive-gate silicon-controlled rectifier (SCR) manufactured by Littelfuse. It features a 600V peak repetitive off-state voltage and an on-state RMS current of 8.0A at a case temperature of 90°C. The device operates within a junction temperature range of -40°C to 110°C and withstands a non-repetitive surge current of 90A. Packaged in a lead-free DPAK (TO-252-3) housing, it utilizes a passivated die for reliability. Key electrical characteristics include a maximum on-state voltage of 1.8V and a gate trigger current of up to 200µA.
Feature Summary
- Sensitive gate design enabling direct interfacing with microprocessors via low-level triggering currents.
- Passivated die construction ensuring high reliability and parameter uniformity across operating conditions.
- ESD protection rated at greater than 8000V under the Human Body Model standard.
Applications
- Solid-state relays
- Industrial motor control systems
- Process control circuits
Procurement Notes
Verify the specific ordering suffix to confirm package style and environmental compliance. The 'T4G' designation indicates a tape-and-reel shipping format within a lead-free DPAK package. Confirm that the required blocking voltage rating matches the application's peak repetitive off-state voltage requirements before procurement.
Selection Notes
Select this component when a compact surface-mount SCR is required for moderate power switching applications. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance. Verify that the gate drive circuitry can supply the necessary trigger current without exceeding the forward average gate power limits during operation.
Part Context
This device belongs to the MCR8DSM series of thyristors designed for industrial and consumer electronics. It shares the same physical footprint and general electrical profile as the MCR8DSN variant, which offers an 800V blocking voltage rating. Both variants utilize the Case 369C miniature plastic package for surface mounting.
Replacement Considerations
The MCR8DSNT4G serves as a higher-voltage alternative within the same package family. Designers must verify that the increased 800V blocking voltage rating does not conflict with existing circuit constraints or derating requirements.
FAQ
What is the maximum allowable soldering temperature for this component?
The maximum lead temperature for soldering purposes is 260°C, measured 1/8 inch from the case for a duration of 10 seconds.
How does junction temperature affect the gate trigger current?
The gate trigger current varies with temperature; typical values are 12µA at 25°C and increase to 300µA at -40°C.
What is the critical rate of rise of off-state voltage (dv/dt)?
The critical rate of rise of off-state voltage is typically 45 V/µs at a junction temperature of 110°C.
