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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tube
- Technology：LDMOS
- Frequency：1.99GHz
- Gain：20dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.25 A
- Power - Output：40W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-780-4
- Supplier Device Package：NI-780-4
- Configuration：Dual
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Overview
The MD7P19130HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It delivers 40 Watts average output power at 28 Volts with a typical gain of 20 dB and drain efficiency of 30%. The device features internal input and output matching, integrated ESD protection, and RoHS compliance.
Feature Summary
- Internally matched for ease of use
- Integrated ESD protection
- RoHS compliant
Applications
- CDMA base stations
- Multicarrier amplifier applications
- PCS/cellular radio systems
- WLL applications
Procurement Notes
Verify the exact ordering suffix against official documentation to confirm packaging type. Confirm current product status as availability may vary. Ensure compatibility with existing RF design parameters before procurement.
Selection Notes
Select this component for high-power RF amplification in cellular infrastructure. Evaluate thermal management requirements due to high junction temperatures. Verify impedance matching networks align with internal matching specifications.
Part Context
This part belongs to the MD7P19130 series of RF power LDMOS transistors. It is manufactured by NXP USA Inc., formerly Freescale Semiconductor. The device is optimized for linear operation in Class AB and Class C configurations.
Replacement Considerations
Check for direct substitutes within the same family. Verify pinout and thermal characteristics match. Consult manufacturer for end-of-life notifications.
