MD7P19130HSR3

Overview

The MD7P19130HSR3 is an RF MOSFET utilizing LDMOS technology, manufactured by NXP USA Inc. It operates at a test voltage of 28 V and a test current of 1.25 A. The device provides a power output of 40 W with a gain of 20 dB at a frequency of 1.99 GHz. It features a rated voltage of 65 V and is housed in the NI-780S-4L surface mount package.

Feature Summary

• Dual configuration LDMOS RF MOSFET design
• Surface mount installation in NI-780S-4L package

Applications

• RF power amplification
• Wireless communication systems

Procurement Notes

Verify the manufacturer part number against official NXP documentation to ensure accuracy. Confirm that the NI-780S-4L package type matches your PCB layout requirements. Check for RoHS compliance status as indicated in official certificates. Note that this component may be listed as obsolete or discontinued; verify current availability through authorized channels before finalizing procurement plans.

Selection Notes

Select this component when a dual-configuration LDMOS RF MOSFET is required for specific frequency bands around 2 GHz. Ensure the system can accommodate the 28 V test voltage and 65 V rated voltage limits. Verify that the NI-780S-4L surface mount footprint is compatible with your assembly process. Consider the 40 W power output capability relative to your amplifier stage requirements.

Part Context

This component belongs to the MD7P1 series of RF MOSFETs from NXP (formerly Freescale). It is designed for high-frequency applications requiring robust LDMOS performance. The part is distinct from other series like MRF7S due to its specific dual configuration and package type.

Replacement Considerations

Consult official NXP substitution guides for verified alternatives. No public substitute part numbers are confirmed in the provided data.