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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：1.99GHz
- Gain：20dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.25 A
- Power - Output：40W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-780S-4
- Supplier Device Package：NI-780S-4
- Configuration：Dual
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Overview
The MD7P19130HSR5 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C configurations for PCS/cellular radio and WLL systems. The device delivers 40 Watts average output power at 28 Volts with a typical gain of 20 dB. It withstands 10:1 VSWR at 32 Vdc and achieves 130 Watts CW output power at the 1 dB compression point.
Feature Summary
- Internally matched input and output networks to simplify circuit design
- Integrated electrostatic discharge (ESD) protection mechanisms
- Extended negative gate-source voltage range optimized for Class C operation
Applications
- CDMA base station amplifiers
- Multicarrier amplifier stages
- PCS/cellular radio transmitters
- Wireless Local Loop (WLL) systems
Procurement Notes
Verify the specific suffix designation against official documentation, as standard listings typically reference HR3 or SR3 variants. Confirm RoHS compliance status and check for any Product Change Notifications regarding package updates or testing reductions before finalizing procurement specifications.
Selection Notes
Select this component for wideband RF power amplification requiring high linearity in cellular infrastructure. Ensure thermal management accommodates junction temperatures up to 225°C. Validate impedance matching networks using provided series equivalent large-signal parameters for optimal performance across the specified frequency band.
Part Context
This device belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It utilizes Lateral DMOS technology specifically engineered for high-power wireless communication applications. The part integrates dual-gate structures within a single surface-mount package to facilitate push-pull or balanced amplifier topologies.
Replacement Considerations
Consult official substitution lists for verified alternatives. Generic cross-references may not match internal matching networks or ESD protection characteristics.
