MDNA425P2200PTSF

MDNA425P2200PTSF

$122.88
  • Description:DIODE MOD GP 2200V 425A SIMBUS F
  • Series:-

SKU:bf8217be919f Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:DIODE MOD GP 2200V 425A SIMBUS F
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • Diode Configuration:-
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):2200 V
  • Current - Average Rectified (Io) (per Diode):425A
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-
  • Mounting Type:Chassis Mount
  • Package / Case:SimBus F
  • Supplier Device Package:SimBus F
  • Grade:-
  • Qualification:-

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MDNA425P2200PTSF

Overview

The MDNA425P2200PTSF is a silicon SCR module manufactured by IXYS, designed for high-power phase leg applications. It features a rated repetitive off-state voltage (VDRM) of 2.2 kV and supports screw mounting for secure installation. The component utilizes standard blister pack packaging and belongs to the thyristor sub-category within discrete power modules.

Feature Summary

  • Integrated phase leg circuit configuration for efficient power conversion
  • High-voltage capability with 2.2 kV rated repetitive off-state voltage
  • Robust mechanical design utilizing screw mount installation style

Applications

  • Industrial motor drives requiring high voltage isolation
  • Power supply systems utilizing phase-controlled rectification
  • Static VAR compensators in electrical transmission networks

Procurement Notes

Verify the complete part number including suffixes against official manufacturer documentation to ensure correct package and terminal configuration. Confirm RoHS compliance status and specific datasheet revisions prior to ordering, as manufacturing specifications may evolve. Cross-reference Mouser part numbers for accurate distributor identification.

Selection Notes

Select this component when designing circuits requiring a dedicated phase leg topology with high blocking voltage. Ensure thermal management solutions accommodate the screw mount interface and expected power dissipation. Validate that the 2.2 kV rating exceeds peak transient voltages in the target application environment.

Part Context

This device is part of IXYS' broader portfolio of silicon thyristor modules. It shares the MDNA series designation, indicating a standardized form factor for industrial power electronics. The product falls under the discrete and power modules category, serving as a critical switching element in high-energy AC/DC conversion stages.

MDNA425P2200PTSFMDNA425P2200PTSF
$122.88
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