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The MDSGN-750ELMV is a hermetically sealed, internally matched, common source Class AB GaN on SiC HEMT transistor designed for Mode-S ELM Avionics applications. It operates across the 1030 to 1090 MHz band and provides over 18.5 dB gain with 750 Watts of pulsed RF output power at ELM pulse format. The device utilizes gold metallization and eutectic attach for high reliability. Key electrical characteristics include a drain-source voltage (VDSS) of 150 V, gate-source voltage (VGS) range of -8 to +0 V, and maximum power dissipation of 1375 W at 25°C. Operating junction temperature reaches +250°C.
Verify component authenticity through authorized Microsemi or Microchip Technology distributors. Confirm datasheet revision and package outline compatibility before integration. Ensure thermal management solutions support the specified operating junction temperature and power dissipation ratings. Check export classification status if applicable to your region.
Select this component for high-power L-band avionics requiring robust GaN technology. Consider the 150 V drain-source voltage and 1375 W dissipation capability for system design margins. Evaluate the 55-KR package dimensions for mechanical fit. Verify bias conditions align with the specified Vdd and Idq requirements for optimal efficiency and gain.
This part belongs to the Microsemi/Microchip Technology portfolio of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). These devices are engineered for demanding RF applications where high power density and reliability are critical. The MDSGN series specifically targets aviation communication standards.
Consult Microsemi technical documentation for direct substitutes. Verify pinout, package dimensions, and electrical parameters match exactly. Cross-reference with other MDSGN variants if available.